| 摘要 |
The semiconductor device with capacitor for alpha particle protection comprises; a field isolation layer (12) formed on a first type substrate (11), a gate electrode (15), and regions (16,17) of the second type adjacent the gate electrode. A trench (19) in the substrate contains a condenser. The trench is formed in the field isolation layer (12) and in the substrate under the layer. The condenser has more than one trench. A first electrode on the condenser insulator layer (20) or a second electrode on the condenser gate insulation layer may be coupled to one of the second type regions.
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