发明名称 |
SEMICONDUCTOR DEVICE HAVING FIRST AND SECOND ELECTRODES AND METHOD OF PRODUCING THE SAME |
摘要 |
<p>A semiconductor device comprises a semiconductor substrate in which a plurality of semiconductor regions are formed, a front surface electrode in contact with the region, and a back surface electrode consisting of a gold alloy layer and a silver layer. After formation of the front surface electrode, the back side of the substrate is polished. Then, the gold alloy layer and the silver layer are formed in succession on the polished back surface of the substrate.</p> |
申请公布号 |
EP0127089(B1) |
申请公布日期 |
1990.01.31 |
申请号 |
EP19840105669 |
申请日期 |
1984.05.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MORIYAMA, SHIGERU C/O PATENT DIVISION;TAO, KINZO C/O PATENT DIVISION;YAMAMOTO,YOSHIO C/O PATENT DIVISION |
分类号 |
H01L21/52;H01L21/60;H01L23/482 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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