| 摘要 |
PURPOSE:To solve a problem of an ON resistance and an isolation in a semiconductor integrated circuit where a vertical-type DMOSFET of one conductivity type having a drain region inside an isolation region has been arranged by a method wherein a diffusion layer of an opposite conductivity type is arranged inside the isolation region so as to be adjacent to the drain region. CONSTITUTION:In a semiconductor integrated circuit where a vertical-type DMOSFET of one conductivity type having a drain region 6 inside an isolation region limited by isolation layers 5, a diffusion layer 10b, of an opposite conductivity type, is arranged inside said isolation region so as to be adjacent to said drain region 6. For example, a p-type substrate region 10a is formed; at the same time, a p-type diffusion layer 10b as an anode region 10b of a diode D1 arranged inside an identical isolation region is formed to be adjacent to a drain wall layer 6. Then, a p<+> type substrate contact region 11a and an anode contact region 11b are formed individually in individual contact parts of the p<+> type substrate contact region 10a and the anode region 10b by a diffusion operation. |
