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摘要

The ROM circuit comprises a first transistor having a control and a floating gate and a depletion type second transistor having a gate formed as an extension of the floating gate. The second transistor outputs a high level control signal if hot electrons have been accumulated on the floating gate of the first transistor by the application of a predetermined high level input signal to the control gate, and outputs a low level signal when the high level input signal has not been provided to the control gate. A resistor is connected between the control gate and drain of the first transistor, and a second resistor is connected between the output node of the second transistor and the second voltage surce.