KEY MATRIX CIRCUIT OF MOS TRANSISTOR,申请号KR19870000455U-传众专利搜索

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发明名称	KEY MATRIX CIRCUIT OF MOS TRANSISTOR
摘要
申请公布号	KR900000851(Y1)	申请公布日期	1990.01.31
申请号	KR19870000455U	申请日期	1987.01.17
申请人	SAMSUNG ELECTRONICS CO.,LTD.	发明人	SONG, CHANG-SUB
分类号	G06F3/02;(IPC1-7):G06F3/02	主分类号	G06F3/02
代理机构		代理人
主权项
地址

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