| 摘要 |
PURPOSE:To obtain a semiconductor laser device which can detect a rearward radiated beam stably and whose manufacturing operation efficiency is good by a method wherein a transmission grating is formed on a heat sink on the surface of the rearward radiated beam extraction side of a semiconductor laser chip and the rearward radiated beam is incident on a photodetector via the transmission grating. CONSTITUTION:In a semiconductor laser device constituted in such a way that a rearward radiated beam of a semiconductor laser chip 1 fixed onto a heat sink 2 is incident on a photodetector 4, the semiconductor laser chip 1 is fixed onto the heat sink 2 on the frontward radiated beam extraction side of the semiconductor laser chip 1; a transmission grating 3 is formed on the heat sink 2 on the surface of a rearward radiated beam extraction side of the semiconductor laser chip 1. Then, the rearward radiated beam of the semiconductor laser chip 1 is incident on the photodetector 4 installed on the lateral-face side or the bottom side of the heat sink 2 via the transmission grating 3. Thereby, the rearward radiated beam can be detected stably; when the laser chip is fixed, high positioning accuracy is not required; manufacturing operation efficiency can be improved. |
