| 摘要 |
<p>A dynamic random access memory device includes a substrate (11), a plurality of paris of sources (21, 32) and drains (25) of transistors formed in the substrate and located within an area defined by field oxidation films (29) formed on the substrate. Gate electrodes (24) are formed on gate oxidation films (32) formed on the substrate and located between the pairs of sources and drains. The gate electrodes extend in a first direction (Y) perpendicular to the direction of a channel formed between the paired source and drain. A plurality of word lines (22) are formed on the field oxidation films and extend in a second direction (X) identical to the direction of the channel. The word lines are integrally formed with the gate electrodes (24). A plurality of bit lines (21) are formed in the substrate and include the sources as portions thereof. The bit lines extend in the first direction perpendicular to the direction of the channel. An insulating film (30) covers the word lines and the gate electrodes, and includes contact holes. A plurality of storage capacitors (26, 27, 28) each make connect with related one of the drains through related one of the contact holes formed in the insulating film. Each of the storage capacitors includes a storage electrode (26) extending above related one of the gate electrodes, related one of the word lines and the field oxidation films, a dielectric film (28) surrounding the storage electrode, and an opposed electrode (27) so as to cover the dielectric film.</p> |
