发明名称 Temperature compensation for potentiometrically operated isfets.
摘要 <p>Compensation for the temperature sensitivity of the output of a potentiometrically operated ISFET probe whose drain-source voltage and drain-source current are held constant is provided by using a Nernstian temperature correction of the difference between the ISFET output and the isopotential voltage of the probe and offsetting the resulting difference by the isopotential pIon value. An ISFET/NISFET pair provides a cancellation of variations due to manufacturing.</p>
申请公布号 EP0352537(A2) 申请公布日期 1990.01.31
申请号 EP19890112602 申请日期 1989.07.10
申请人 GENERAL SIGNAL CORPORATION 发明人 CONNERY, JAMES G.;SHAFFER, EARL W., JR.
分类号 G01N27/414 主分类号 G01N27/414
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