| 摘要 |
PURPOSE:To prevent the deterioration of adhesion between high melting point metal or its silicide film and a poly crystalline silicon film, restrain the high melting point metal from diffusing into a polycrystalline silicon film, and reduce the fluctuation of characteristics, by forming the high melting point metal or its silicide film of a gate electrode after a source.drain is formed. CONSTITUTION:After a polycrystalline silicon film and a first insulating film are formed in order via a gate oxide film 104 formed on a semiconductor substrate 101 of one conductivity type, a polycrystalline silicon film 105 and a first insulating film 106 are left on a gate electrode forming region, by patterning. Next, by using the polycrystalline silicon film 105 and the first insulating film 106 on the gate electrode forming region as masks, inverse conductivity type impurity is ion-implanted, thereby forming a source.drain 108. After that, a side wall 110 composed of a second insulating film is formed on the side surfaces of the polycrystalline silicon film 105 and the first insulating film 106. After the first insulating film 106 on the polycrystalline silicon film 105, where the side wall 110 is formed, is eliminated, a high melting point metal film or a silicide film 111 of high melting point metal is selectively formed on the polycrystalline silicon film 5. |
