| 摘要 |
PURPOSE:To highly integrate elements by forming an oxidizer supply control film on the surface of silicon, exposing it at a high temperature in the presence of oxidizer to oxidize the surface of the silicon thereby to form a silicon dioxide film, and forming the silicon dioxide film having high reliability. CONSTITUTION:A silicon trench 2 is formed on an active region in which elements are isolated on a silicon wafer 1. A tantalum oxide film 3 is grown on a whole wafer 1 for an oxidizer supply control film by an optical CVD method. The surface of silicon is oxidized on the basis of diffusing action of the oxidizer through the film 3 by exposing it at a high temperature in the presence of the oxidizer to form a silicon dioxide film 4, and the film 3 is thereafter removed. Thus, the film 4 having high reliability is formed, and elements are highly integrated. |
