| 摘要 |
PURPOSE:To provide an effective contact even if the size of a diffused layer of an insulated field effect is small and to highly integrate by forming a high melting point silicide on the diffused layer of the transistor. CONSTITUTION:A gate oxide film 3 is formed on a semiconductor substrate 1 in which elements are isolated. A gate electrode which contains a polycrystalline silicon layer 4 having low impurity concentration and a polycrystalline silicon layer 5 having high impurity concentration is formed on the film 3. With the gate electrode as a mask source, drain regions are formed on the substrate 1. An insulating film 7 is formed on the side face of the electrode. The layer 4 is removed. A high melting point silicide 9a is formed on the whole surface of the substrate 1 including the layer 4 and the source, drain regions. An etching is conducted until the silicide 9a is isolated from the film 7 to form a high melting point metal silicide electrode 9b on the layer 4 and a high melting point metal silicide electrode 9c on the source, drain regions. Thus, a high integration is performed. |
