发明名称 CMOS TIME DELAY CIRCUIT
摘要 The circuit for obtaining the time delay of output signal (Vo) at rising edge or falling edge selectively by applying certain input signal (Vi) to a PMOS transistor (1) and NMOS transistor (2) simutaneously includes a PMOS transistor (1) receiving input power through source, a source grounded NMOS transistor (2), and a depletion transistor (3) having time delay in the rising edge and falling edge, and a second delay circuit for constant time delay regardless of the input voltage variation.
申请公布号 KR900000486(B1) 申请公布日期 1990.01.30
申请号 KR19870006724 申请日期 1987.06.30
申请人 SAMSUNG ELECTRONICS CO.LTD. 发明人 CHOI JIN-HWAN;DO JAE-YOUNG;IM HYUNG-KYU
分类号 H03K17/28;(IPC1-7):H03K17/28 主分类号 H03K17/28
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