发明名称 Method of processing siloxane-polyimides for electronic packaging applications
摘要 A method of forming a multilayer metallization pattern using siloxane polyimide dielectric layers comprises forming the first siloxane polyimide layer, laser etching holes in the first layer, plasma etching the first layer to be sure the holes are clean, then cleaning the surface of the first layer in an etchant for silicon oxide, after which the metallization layer is formed and patterned and a second siloxane polyimide layer is formed thereover with good adhesion.
申请公布号 US4897153(A) 申请公布日期 1990.01.30
申请号 US19890342153 申请日期 1989.04.24
申请人 GENERAL ELECTRIC COMPANY 发明人 COLE, HERBERT S.;KOHL, JAMES E.
分类号 H05K3/26;B32B27/00;B32B27/16;H01L21/312;H01L21/48;H01L21/768;H01L23/12;H01L23/538;H05K3/00;H05K3/38;H05K3/46 主分类号 H05K3/26
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