| 摘要 |
A structure for a thin-film electroluminescent (TFEL) device includes an EL phosphor layer sandwiched between a pair of insulator stacks, at least one of the stacks including a thin layer of silicon oxynitride in direct contact with the last grown side of the phosphor layer and a second thicker layer of barium tantalate. The silicon oxynitride layer has high resistivity, and when combined with a second insulator having a high dielectric constant, such as barium tantalate, produces an increase in luminance of the phosphor layer at conventional voltages. Both insulator stacks may include a silicon oxynitride layer, but this layer is in contact only with the last grown side of the EL phosphor layer. On the other side of the EL phosphor layer the high dielectric constant layer lies between the silicon oxynitride and the EL phosphor layer.
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