| 摘要 |
A semiconductor device of a type of a sidewall base contact structure transistor, comprising a semiconductor substrate of first conductive type; a transistor structure including a first collector region of a second conductive type, a second collector region of the second conductive type the impurity density of which region is lower than that of the first collector region, a base region of the first conductive type, and an emitter region of the second conductive type, each of the four regions being composed of a single crystalline semiconductor layer, formed one after another in the mentioned order on the main surface of the semiconductor substrate; an insulating layer provided on the main surface of the semiconductor substrate, surrounding the first and second collector regions, the base region, and the emitter region; a collector lead region embedded in the insulating layer, one end of the region being in contact with the side wall of the first collector region, the other end of the region being exposed from a part of the surface of the insulating layer; a base lead region embedded in the insulating layer, one end of the region being in contact with the side wall of the base region, the other end of the region being exposed from a part of the surface of the insulating layer other than the part where the other end of the collector lead region is exposed. This application is a continuation of application Ser. No. 861,755, filed on May 9, 1986, now abandoned, which is a continuation of application Ser. No. 566,682, filed on Dec. 29, 1983, now abandoned.
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