发明名称 THIN FILM SEMICONDUCTOR DISPLAY DEVICE AND ITS MANUFACTURE
摘要 <p>PURPOSE:To display a half tone, and also, to contain a driving circuit in the same substrate by making a crystallinity of a TFT of a channel part of a picture element part lower than a crystallinity of a driving part, and a source and a drain of the picture element part. CONSTITUTION:A source 2, a drain 3 and a channel area 4 of a peripheral driving part are constituted of polycrystalline silicone (Poly-Si), and a source 2 and a drain 3 of a picture element part, a channel area 5 are constituted of poly-Si, and amorphous silicon (a-Si), respectively. A TFT of a peripheral driving circuit has large carrier mobility, and the circuit is driven easily and can be contained on the same substrate. Also, since the channel area 5 of the picture element part is formed by a-Si, the carrier movement is small, but since the resistivity is >=10<7>OMEGAcm, a leak current is small as 10<-12>A, and a half tone can be displayed.</p>
申请公布号 JPH0227320(A) 申请公布日期 1990.01.30
申请号 JP19880176919 申请日期 1988.07.18
申请人 HITACHI LTD 发明人 AOYAMA TAKASHI;KOIKE YOSHIHIKO;KO NAKAYUKI;OKAJIMA YOSHIAKI
分类号 G02F1/136;G02F1/1368;H01L21/336;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/136
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