| 摘要 |
PURPOSE:To speed up electrons of a semiconductor device by having a semiconductor laminated body consisting of first to third semiconductor layers, forming a stage difference of the semiconductor laminated body locally, and setting the height of the stage difference to the extent that the side surface of the semiconductor layer is exposed. CONSTITUTION:A semiconductor laminated body consisting of first to third semiconductor layers 2 to 4 is in a projecting shape locally and has a stage difference where the side surface of the first semiconductor layer 2 is exposed. Also, a line-shaped electron conduction area 5 is formed on the side surface of the first semiconductor layer 2. This lineshaped electron conduction area 5 has a sufficiently narrow width and thickness to the extent that the direction is limited to one direction so that the advance direction of the electron is in parallel to the side surface of the first semiconductor layer 2 and is in parallel to the side surface of the first semiconductor layer 2 and the junction surface of the first semiconductor layer 2 and second and third semiconductor layers 3 and 4. Thus. in the line-shaped electron conduction area 5. scattering of electrons is extremely restricted. Thus, an extremely high-speed traveling of electrons can be realized. |
