发明名称 MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To reduce pad pitch within TEG by forming a barrier layer of a bump resistance measuring part and a barrier layer of a probe contact pad and a bump electrode only on a barrier layer of the bump resistance measuring part. CONSTITUTION:After forming barrier layers 25a and 25b of a bump resistance measuring part and barrier layers 25c and 25d of a probe contact pad, the barrier layers 25c and 25d of this probe contact pad are coated with a resist 27 and a bump electrode 26 is formed only on the barrier layers 25a and 25b of the bump resistance measuring part. Then, a constant current is allowed to flow to the barrier layers 25c and 25d of the probe contact pad with a current probe and voltage drop is measured by a voltage drop measuring probe for performing bump resistance measurement. Thus, short-circuiting between the barrier layers 25a and 25b of the bump resistance measuring part and the barrier layers 25c and 26d of the probe contact pad can be prevented. It enables a measurement pad pitch 34 of Test Element Group(TEG) to be narrow.</p>
申请公布号 JPH0226043(A) 申请公布日期 1990.01.29
申请号 JP19880174870 申请日期 1988.07.15
申请人 OKI ELECTRIC IND CO LTD 发明人 TOMINAGA YUKIHIRO
分类号 H01L21/66;H01L21/321;H01L21/60 主分类号 H01L21/66
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