MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To eliminate the possibility of causing damage or defect in a conductive layer by forming residues of spacers at opening side walls so as to reduce the abruptness of curved parts between contact regions and spacer residues. CONSTITUTION: A first material layer 4 is formed on a cover layer 3. A second material layer 5 is fomred on the layer 4. The layers 4, 5 are anisotropically etched at different rates so that the layer 4 is etched more slowly than the layer 5 in an anisotropical etching step. After this etching to expose the surface 3a of the layer 3 and surface region at a conductive level 1, the side walls 2a of openings 2 remain covered with a material 40. Other material parts 50 extend on the material 40 above the side walls of 2a of the openings 2 from the exposed region 10 at smaller distances that the depth of the opening 2. Thus it is possible to provide a conductive layer 6 on a surface having comparatively gentle slopes and corner and to prevent the damage and defect from occurring.