发明名称 MULTILAYER THICK FILM HYBRID INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE:To realize a high packaging density by a method wherein a hole is provided to a first pattern of a wiring pattern and an insulating layer between an upper and a lower pattern adjacent to the first pattern to connect the above patterns with each other, and a resistor is buried into the hole to connect the wiring patterns of the above layers with each other with the resistor. CONSTITUTION:A conductor pattern 4 and an insulator 3 are successively formed on a substrate 1, and a hole 5, which is connected to the conductor pattern 4, is provided to the insulator 3. The hole 5, whose sectional area and depth are s and d respectively, is filled with a paste-like resistor 6 formed of a conductor component of an optional volume resistivity, a glass component, and a vehicle component, and in contact with the layer pattern 4. And, an upper pattern 2 is so formed on the insulator 3 to be in contact with the resistor 5, whereby the upper pattern 2 and the lower pattern 4 are connected with each other through the resistor 4. The resistance value of the resistor 6 is determined depending on the thickness d of the insulator, the sectional area s of the hole, and a sheet resistance value of the resistor 6. By these processes, the ratio of the area occupied by a chip-type resistor to other area can be decreased, so that other components can be packaged on the area not occupied with the resistor and consequently a high packaging density can be attained.</p>
申请公布号 JPH0225088(A) 申请公布日期 1990.01.26
申请号 JP19880174543 申请日期 1988.07.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAMEOKA FUSAHIRO
分类号 H05K1/11;H05K1/16;H05K3/40;H05K3/46 主分类号 H05K1/11
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