| 摘要 |
<p>PURPOSE:To improve a junction state as well as to contrive the improvement of transistor characteristics by a method wherein an intrinsic Si film is formed on an impurity Si layer and a protective insulating film is formed on it. CONSTITUTION:A gate electrode 2 is formed on an insulative substrate 1, a gate insulating layer 3 is formed on the substrate 1 including the electrode 2, an impurity Si layer 4 is formed on it and the layer 4 is etched to form the patterns of a pair of impurity Si layers 4 in such a way as to cross the end parts of the electrode 2. Then, an intrinsic Si layer 5 and a protective insulating layer 6 are continuously formed, the layer 6 is etched using a photoresist as a mask and moreover, the layer 5 is subjected to dry etching to expose the layer 4 and after the surface of the layer 4 is cleaned, the photoresist is peeled. In such a way, the layers 5 and 6 are formed on the layer 3 and on a pair of the layers 4 in such a way as to couple a pair of the layers 4 with each other. Source and drain electrodes 7 and 8 are formed in such a way as to come into contact to the contact part 9 in each layer 4.</p> |
