| 摘要 |
PURPOSE:To form an FM-IF block and an FM front/end block as one chip by providing extraction electrodes for extracting a leakage current through a semiconductor substrate on the side of the FM-IF block corresponding to the side of the FM front/end block. CONSTITUTION:An FM front/end block 26 is integrated in mats K-M, and an FM-IF block 27 which has a limiter circuit to remove an AM portion in an FM signal, is integrated in mats E and F. MOS type capacitors existent in the limiter circuit are formed in islands, respectively, and produce leakage toward a substrate owing to a capacitor due to a PN junction formed by the island 19. A PN junction barrier is formed with use of an N type epitaxial layer 17 to prevent the leakage current from invading into the block 26. Additionally, the capacitors are jointly disposed in the mat E which is further adapted to include extraction electrodes 43, 79 on the left side and on the lower side and a contact as an isolator region for extracting the leakage current collectively. Thus, the blocks 26, 27 can be constructed as an one chip. |
