| 摘要 |
<p>PURPOSE:To obtain a rectification element equipped with a heat-dissipating container whose heat-dissipating characteristic and coefficient of linear expansion are balanced by a method wherein the heat-dissipating container and a heat sink are composed of a three-layer clad material of copper, a Kovar and copper and a layer-thickness ratio of the Kovar in the three-layer clad material is limited. CONSTITUTION:A heat-dissipating container 6 is composed of a three-layer clad material of copper 6a, a Kovar 6b and copper 6c; the rear surface of a silicon chip 1 as a Zener diode is mounted on the U-shaped bottom of the heat-dissipating container 6 by using a solder layer 3a. The surface of the silicon chip 1 is bonded to a heat sink 7 composed of a three-layer clad material of copper 7a, a Kovar 7b and copper 7c by using a solder layer 3b; another face 7c of the heat sink 7 is connected to a lead wire 4 by using a solder layer 3c, and an electrode is extracted. A layer-thickness ratio of the Kovar to a total layer thickness in the three-layer clad material is set at 10 to 60%. In a rectification element which uses this specific clad material for the heat-dissipating container, a heat-dissipating characteristic and a thermal stress are balanced, and a thermal stress caused by a solder bonding operation is relaxed by a characteristic of the Kovar.</p> |
