| 摘要 |
PURPOSE:To make it unnecessary to connect via an insulating layer input-output which is commly used in a flip flop means, word line means, bit line means, and switching means, by forming all of them on a first active element layer. CONSTITUTION:In the memory cell circuit of a lamination type static random- access memory(SRAM), a word line 35 is formed on the upper active element layer (first layer), and further P-MOS field effect transistors Q7 and Q8 for access are formed on the first layer. In more detail, one electrode of the transistor Q7 is connected to the node N11 of a flip flop; the other electrode is connected to a bit line 33; a control electrode is connected to a word line 35. In a similar manner, one electrode of the transistor Q8 is connected to a node N21; the other electrode is connected to a bit line 34; a control electrode is connected to the word line 35. All of these connections are performed on the first layer. |
