| 摘要 |
PURPOSE:To make it possible to obtain a tunnel junction having a good crystallizability by a heteroepitaxial growth by a method wherein an oxide which is represented by a Bi2Sr2Lnn-1CunO2n+4 is used as a substrate which is held between superconductors and constitutes a tunnel barrier. CONSTITUTION:The cleavage plane of a magnesium oxide single crystal is not used as a substrate 1 for forming a film. An oxide superconductor which is represented by an Bi2Sr2Can-1CunO2n+4, such as a Bi2Sr2-CaCu2O8 9 is formed, and thereafter, a target is exchanged and an oxide which is represented by a Bi2Sr2Lnn-1CunO2n+4 (the Ln is yttrium and symboled Y.) or lanthanoid elements, such as a Bi2Sr2YCu2O8 10 is deposited thereon using masks 12 conformed to the sizes of element regions. A target is again exchanged, a Bi2Sr2 CaCu2O8 is deposited using second masks 13 and a tunnel junction is formed.
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