发明名称 |
Method for passivating a compound semiconductor surface. |
摘要 |
<p>A method for passivating the surface of a compound semiconductor (12) comprises annealing the substrate (12) to form an anion rich surface layer containing cationic and anionic oxides and stripping the oxides to leave only a very thin anionic layer on the surface. The substrate (12) is then subjected to an H2 plasma cleaning to remove chemisorbed oxygen. An N2 plasma cleaning is then performed to form an anionic nitride layer (20) that is free of any cationic nitride. A layer of insulating material (22), such as, a native or other oxide, or a nitride, is deposited. The resulting structure (10) has a very low interface state density such that the Fermi level may be swept through the entire band gap.</p> |
申请公布号 |
EP0351505(A2) |
申请公布日期 |
1990.01.24 |
申请号 |
EP19890108122 |
申请日期 |
1989.05.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BUCHANAN, DOUGLAS ANDREW;CALLEGARI, ALLESSANDRO CESARE;HOH, PETER DAVID;LACEY, DIANNE LYNN |
分类号 |
H01L21/318;H01L29/78 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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