THIN FILM TRANSISTOR ARRAY

摘要

PURPOSE:To lower the probability of disconnection by a transparent conductive film having high adhesive strength even if one metal exfoliates from a protective insulating layer beneath said metal by constituting a source wiring material of 2 kinds. CONSTITUTION:Ti is deposited as a source metallic wiring on a part of an phosphorus-doped n<+>-amorphous silicon n-a-si film 6 and is patterned to form the source wirings 7. ITO of the transparent conductive film is then deposited and the patterns of crossed part source wirings 8 are formed on the source wirings 7 of the Ti film. The pattern shape of the crossed parts of the gate wirings 2 and the source wirings is made into the two-layered structure in the above-mentioned process. The connection between the transparent conductive film consisting of such a material as the ITO having the high adhesive strength to the n layer and the n layer is hardly exfoliatable even if the connection between the Ti constituting a part of the transparent conductive film and the n layer under the same is disconnected. The source wirings is made hardly exfoliatable as a whole. The disconnection of the crossed parts is decreased in this way.