| 摘要 |
<p>PURPOSE:To reduce the delay in signals while correcting the noise margin for enhancing the performances of an IC by a method wherein photodetecting element comprising amorphous silicon is laminated to be three-dimensionally constituted on a light emitting element comprising a compound semiconductor through the intermediary of a transparent insulating film. CONSTITUTION:A light emitting element 10 as well as the whole surface extending over a substrate is coated with a transparent insulating film comprising an SiO2 film 22. A photodetecting element 30 to be arranged on the SiO2 film 20 is lamination composed of a lower electrode 31 comprising Al provided on the position not to disturb the light emission from the light emitting element 10, a p-aSi layer 32, an intrinsic aSi layer 33, an n-aSi layer 34 and an upper electrode 35 comprising Al.</p> |
