| 摘要 |
PURPOSE:To miniaturize the structure of a transistor constituting a unit storage circuit to store memory information, and increase the capacity of a capacitance element, by forming a signal holding passive element so as to extend on the surface and recessed part of an insulating film, and connecting a first electrode layer of the passive element to an impurity region on one side of an conductive film via said conducting film, a part of which is formed on an impurity region on one side of an switching element. CONSTITUTION:A signal holding passive element (capacitor) 14 is thickly formed on a semiconductor substrate 1 surface, and extends on a flattened surface of an insulating film 16. Further, it extends and bends into the inside of an aperture 12 formed in the insulating film 16. The lower electrode 8 of the capacitor 14 is connected with an impurity diffusion region 5a of one side of a transistor 13 for a transfer gate via a conductive film 15 composed of polysilicon and the like. The conductive film 15 is formed so as to extend on a gate electrode 4a of the transistor 13 and on the upper part of a gate electrode 4b formed on the surface of a field oxide film 2. |
