发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To rationalize a forming process and to improve dielectric breakdown strength by facing a light emitting element body and a photodetector body on different planes, and providing the light emitting element body and the photodetector body at positions where the projected plane of the light emitting element body is not overlapped with the projected plane of the photodetector body. CONSTITUTION:A light emitting element body 100 is composed of a light emitting element 12 which is formed on an outer lead 11a and a piece of thin wire 15 which is connected to an outer lead 11b and the electrode of the light emitting element 12. A photodetector body 101 is composed of a photodetector 13 which is formed on an outer lead 11c and a piece of thin wire 15 which is connected to an outer lead 11d and the electrode of the photodetector 13. The outer leads 11a and 11b become the inputside terminals of a photo-isolator. The outer leads 11c and 11b become the output-side terminals of the photo- isolator. A silicon based or epoxy based light conducting resin 14 is provided between the light emitting element 12 and the photodetector 13, and a light propagating path is formed. A sealing resin 16 is formed with a mold shaping device and the like.</p>
申请公布号 JPH0220075(A) 申请公布日期 1990.01.23
申请号 JP19880170439 申请日期 1988.07.07
申请人 FUJITSU LTD 发明人 SANO YOSHIAKI
分类号 H01L31/0232;H01L31/02;H01L31/12 主分类号 H01L31/0232
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