| 摘要 |
<p>PURPOSE:To separate an SiC substrate into individual pellets without inflicting mechanical damages upon a P-N junction on a surface of the substrate by a method wherein grooves with their bottoms not less than 10mum distant from the P-N junction are provided on the other surface of the SiC substrate. CONSTITUTION:A P type SiC layer 22 and N type SiC layer 23 are laid down in that order on a surface of a P type SiC substrate 21 for the formation of a P- N junction 24. Grooves 26 are provided in the other surface not reaching the P- N junction 24. There should be a distance not less than 10mum between the bottoms of the grooves 26 and the P-N junction 24. Ohmic electrodes 27 are built on the front surface of the N type SiC layer 23 and ohmic electrodes 28 on the rear side of the substrate 21. The entirety is then cleft along the grooves 26 to be separated into individual pellets.</p> |
