| 摘要 |
A MOS integrated circuit includes a charging transistor and a discharging transistor. One end of the current path of the charging transistor is connected to one end of the current path of the discharging transistor. A high power voltage is applied to the other end of the current path of the charging transistor. The charging transistor charges the one end of predetermined voltage level, and low power voltage is applied to the other end of the current path. The transistor discharges one end to a predetermined voltage level. Each transistor includes layers of a low impurity concentration for weakening the surface electric field of the transistor, thus reducing generation of hot electons or impact ionization current.
|
