发明名称 |
Semiconductor device and method of manufacturing thereof |
摘要 |
An Al layer (6) is first formed to cover an opening region (9) for interconnection in a semiconductor device. Then, an Al-Si-Ti layer (7) having a higher degree of hardness than that of the Al layer (6) is formed on the Al layer (6) and subsequently a mixture layer (8) of aluminum hydrate and aluminum oxide is formed on the surface of the Al-Si-Ti layer (7). Thus, a multilayered film of electrode and interconnection (11) is formed.
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申请公布号 |
US4896204(A) |
申请公布日期 |
1990.01.23 |
申请号 |
US19880224172 |
申请日期 |
1988.07.25 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIRATA, YOSHIHIRO;TAMAKI, REIJI;NOGUCHI, TAKESHI;ARIMA, JUNICHI;SAITOH, KENJI;HARADA, SHIGERU |
分类号 |
H01L23/522;H01L21/3205;H01L21/768;H01L23/532 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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