| 摘要 |
PURPOSE:To improve the efficiency of light extraction, and to prevent the leakage of operating currents by forming layers inhibiting operating currents with the exception of a predetermined conduction region between a first clad layer and a substrate, and/or between the first clad layer and an active layer. CONSTITUTION:Operating currents flow toward an electrode 30 from an electrode 34, and light emitted from an active layer 20 is extracted from a light extracting surface 32. The direction of currents is reverse-biassed between a semiconductor 16 and a first clad layer 18 at that time, and currents directly flow from a substrate 12 to a first clad layer 18 only in the opening 14 of the semiconductor 16. Since the electrode 30 is shaped onto an insulating film 28 and brought into contact with a contact layer 24 in the peripheral section of an opening 26, operating currents passing through the opening 14 do not spread and flow through the electrode 30 through the active layer 20, a second clad layer 22 and the contact layer 24 from the first clad layer 15. Accordingly, the light-emitting section of the active layer 20 is scaled down, thus acquiring the high efficiency of light extraction. |
