| 摘要 |
PURPOSE:To reduce current density, and to prevent blowout by forming the resistor of the input protective device for a MOS type integrated circuit by a polysilicon layer with uniform width and burying a trough section at the inside of the folded section of the plane shape of the resistor with a polysilicon region. CONSTITUTION:The resistor R is constituted in such a manner that the polysilicon layer with uniform width is formed to a folded state so that the plane shape is made to be ?-form. The trough sections 11, 12 at the insides of the two folded sections are buried with a pair of each polysilicon region 13, 14, plane shape thereof takes a square. Current density at the insides of the folded sections is decreased by forming the shape of the pattern of the resistor R in this manner, the generation of heat in the sections is also reduced, and the resistor R is made difficult to be fused as compared to conventional devices. |
