MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

The methode of manufacturing a semiconductor device comprises : (4) forming a polycrystalline or amorphous semiconductor layer (32) on the surface of a substrate of insulating material, or on a substrate obtained by forming an insulating layer (31) on a semiconductor base (30) ; (B) producing an island from the semiconductor layer surrounded by dielectric materials obtained from the semiconductor layer ; (C) forming a Si3N4 (37) film on the island, or on a film of SiO2 formed on the island (32) ; (D) removing the Si3N4 film except from a predetermined region on the island ; (E) irradiating the island with a beam of energy by sweeping so as to melt and recrystallise the island.