| 摘要 |
PURPOSE:To improve the reliability and operating speed of the device by providing electrodes and wirings of the same kinds arranged repeatedly at an interval with which electrode contact windows can be formed among those electrodes and wirings. CONSTITUTION:There are formed on a p type silicon semiconductor substrate 1 an n type impurity diffusion region 2, a field insulating film 3, an interlayer insulating film 4, electrodes and wirings 5, 6 as bit lines, and a cover film 7. There are further provided on a word line an edge 13 of the field insulating film 3, an edge 14 of a capacitor lead wire, and an electrode contact window 15 for connecting the n type impurity diffusion layer 2 and the bit line 5. The electrode and wiring 5 as the bit line is formed on a lower layer, while the electrode and wiring 6 as the bit line formed on an upper layer, and the electrodes and wirings 5, 6 are so closely arranged as to be partially overlapped, viewed in a plane. Hereby, a pitch can greatly be reduced while keeping a function as the electrode and wiring, and hence an occupation area can be reduced. |
