| 摘要 |
A semiconductor device comprises two first electrodes 1 for outside linking on a semiconductor substrate 6, plural first electrodes situated opposite each of the electrodes 1, on the same substrate, a second electrode whose inset portion is between the two electrodes 1, linking portions 3 connecting each of the first electrodes to the first linking electrode by a passage or aloft bridge system, and diagonal linking portions 13 connecting the said first electrodes to the two sides of the zone facing the inset of the second electrode, with respective end portions of the electrodes 1 in an arrangement of the first electrodes, which end portions are adjacent respectively to the first electrodes. The electrode width is reduced to a finger shape facing the inset, according to the inclination, without modifying the rest of the configuration, and the density of integration is improved. <IMAGE> |
