SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To protect semiconductor substrates that are brittle from mechanical shocks from outside and improves workability and yield by a method wherein the sides of a chip semiconductor substrate are covered with a metal protective film. CONSTITUTION:On the main surface of a GaAs substrate 2, a working layer 3, a drain electrode 4, a gate electrode 5 and a source electrode 6 are built, as in the conventional technique. Isolation grooves 13 are provided in the surface for the separation of the GaAs substrate 2 into chips, and the GaAs substrate 2 is thinned out from the rear side until the bottoms of Hall electrodes 10 are exposed. The entirety of the rear surface is used as a rear side electrode 7, on which a Ti/Au or Ni/Au film is deposited by evaporation or electroless deposition and AuPHS(Plated Heat Sink) is formed 60mums thick. A PHS 8 is isolated along the isolation grooves 13 using for example a die for the segmentation of the wafer into FET chips 101. In this way, a brittle GaAs substrate 2, covered with a metal protective film 7a on its sides, is protected from mechanical shocks from outside, which also greatly facilitates the handling thereof.