SEMICONDUCTOR DEVICE HAVING SILICON ON INSULATOR STRUCTURE

摘要

The semiconductor having an SOI structure comprises an insular single crystal silicon body formed on an insulator layer. A first region of a first type semiconductor and source and drain regions of a second type semiconductor are provided in the insular single crystal silicon body so that the first region is provided between the source and drain regions. A second region of the first type semiconductor is in contact with the first region formed along a side of the source and drain regions.