| 摘要 |
The semiconductor device comprises a switching stage including a load (8) having its one terminal connected to a first supply potential and a MESFET (9) connected between the other terminal of the load and a second supply potential. The on/off operation of the switching stage is controlled in response to an input signal. The device further includes a buffer stage comprising a second MESFET (10) connected to receive the switching stage output at the gate of the buffer stage and having one conduction terminal connected to the first supply potential. The device also includes a Schottky barrier diode (11) having its cathode connected to the gate of the second MESFET.
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