METHOD OF MANUFACTURING OF GATE TYPE FET WITH NARROW CHANNEL

摘要

The manufacturing method of a field effect transistor (FET) has the following steps : (a) selectively injecting the first impurities of a first conductivity type into the semiconductor substrate around the transistor region ; (b) subjecting the semiconductor substrate to a heat process for diffusing the first impurities, causing the first impurities to be distributed throughout a greater part of the channel region ; (c) selectively injecting the second impurities of a second conductivity type into the transistor region, so that the first impurities in at least the channel region are substantially compensated by the second impurities.