| 摘要 |
PURPOSE:To reduce the occupation area of an optical detector device by forming on a substrate a thin film transistor having an offset between a gate electrode and a source electrode or a drain electrode. CONSTITUTION:A substrate 1 includes thereon as components of a thin film transistor, a gate electrode 2, a source electrode 3, a drain electrode 4, a gate insulating film 7, an amorphous silicon 8, a photoconductive semiconductor layer 8, and a contact layer 9. An offset portion 5 is formed between the electrodes 2 and 3. A change in the amount of light 6 to be irradiated to the offset portion 5 is converted to a change in resistance of the semiconductor layer 8 of the offset portion, and the change in the resistance is detected as a change in a current flowing through the thin film transistor. |
