| 摘要 |
PURPOSE:To prevent electrochemical corrosion and to enhance a yield and reliability by a method wherein an interface between an electrode wiring upper layer and an electrode wiring lower layer is covered completely with an alloy layer of the upper layer except a face coming into contact with a semiconductor substrate of a metal or a metal compound or with an insulating film as a lower layer. CONSTITUTION:An insulating layer 2 is formed on a semiconductor substrate 1; in addition, a window 3 is formed in the insulating layer 2. An electrode wiring lower layer 4 is formed of a metal, a metal compound or an alloy composed of one out of Ti, W, TiN, TiW, TiSi2 and WSi2; after that, an electrode wiring upper layer 5 is formed of an alloy composed mainly of Al. Thereby, the electrode wiring lower layer 4 is covered completely with the electrode wiring upper layer 5. Then, an interface between the upper layer 5 and the lower layer 4 is not exposed; accordingly, remarkable corrosion by an electrochemical reaction is not caused. Especially, even when this assembly is brought into contact with a halogen or water during a production process, it is possible to prevent the remarkable corrosion. Thereby, a yield is enhanced; a defect of reliability can be reduced. |
