| 摘要 |
PURPOSE:To obtain an alignment mark not exfoliating from a semiconductor substrate by wiring and forming the alignment mark of a metal wiring layer formed in a scribe region, on a semiconductor substrate, via a first insulating film, and forming a second insulating film on the upper part thereof. CONSTITUTION:In a semiconductor device having an alignment mark 3 of a metal wiring layer formed in a scribe region 6, the above alignment mark 3 is arranged on a semiconductor substrate 1 via a first insulating film 2, and a second insulating film 4 is formed on the upper part thereof. For example, the alignment mark 3 of a metal wiring layer for a stepper formed in a scribe region 6 is formed on the first insulating film 2 formed on the semiconductor substrate 1. The second insulating film 4 is formed on the alignment mark 3, and a passivation film 5 is formed thereon. Thereby, the alignment mark of the metal wiring layer formed in the scribe region can be maintained without being exfoliated in the later etching and processing. |
