| 摘要 |
<p>A semiconductor device has PN junction in architecture of PN<->N<+>, P<+>NN<+>, PIN, or P gamma N. Such semiconductor device comprises a first surface layer (2) dopped with a first type impurity at a predetermined first concentration for forming a high resistant layer, a second layer (3) formed below the first layer (2) and doped with a second type impurity which is different from the first impurity at a predetermined limited second concentration, the second layer (3) forming PN junction between the first layer, and a third layer (4) formed below the second layer (3) and dopped with the second impurity at a predetermined third concentration higher than the second concentration. The semiconductor device also has a first edge section extending over the first layer and the second layer and formed into a first Bevel structure having a first taper angle, and a second edge section extending over the second and third layer so as to adjoin with the first edge section at an intersection oriented at a portion in the second layer and formed into a second Bevel structure having a second taper angle.</p> |
