发明名称 GATE ARRAY LARGE SCALE INTEGRATED CIRCUIT DEVICES
摘要 <p>Gate array LSI's are produced with the aid of a standard layout pattern defining a basic cell array region (2), on which internal cell arrays are arranged, and a peripheral circuit region (3), arranged on the periphery of the basic cell array region. The peripheral circuit region comprises input/output cell regions (7), for constructing an input buffer circuit and a part of an output circuit, and a general purpose cell array region (4) which can be used for constructing remaining parts of the output buffer circuit. Where the general purpose cell array region is not used in the construction of such a buffer circuit it can be used for constructing various other desired circuits. Thus greater design flexibility is made available.</p>
申请公布号 IE54711(B1) 申请公布日期 1990.01.17
申请号 IE19830000941 申请日期 1983.04.25
申请人 FUJITSU LTD. 发明人
分类号 H01L21/822;H01L21/66;H01L21/82;H01L27/04;H01L27/118;(IPC1-7):H01L27/02 主分类号 H01L21/822
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