| 摘要 |
<p>PURPOSE:To obtain a non-linear resistance element including a silicon nitride film having characteristics usable as an active element for a liquid crystal display by forming a non-linear resistance film of a nitrogen-added amorphous silicon hydride having an unpaired electrode density in a specific range. CONSTITUTION:In a non-linear resistance element having an insulating substrate 41 on which a first conducting film 42, a non-linear resistance film 44 and a second conducting film 45 are deposited one over another in that order, the non-linear resistance film 44 is formed of nitrogen-added amorphous silicon hydride having an unpaired electron density in a range from 1X10<17> to 5X10<18>cm<-3>. If the film is deposited by the plasma CVD process under a vacuum of 100 Pa with high frequency power of 200 W at a substrate temperature of 250 deg.C, for example, the non-linear coefficient alpha and the unpaired electron density are varied, as shown in the graph, as flow ratio between SiH4 gas and N2 gas is changed. Namely, as the flow ratio of SiH4/N2 increases, the non-linear coefficient alpha increases and then decreases while there is a region where the coefficient keeps a relatively large value around 10, and this region corresponds to the range suitable for the non-linear resistance element.</p> |
