| 摘要 |
<p>PURPOSE:To simplify manufacturing processes for an insulating film under a gate electrode and a floating gate electrode by enabling a change into an integrated circuit regarding the structure of said insulating film and floating gate electrode. CONSTITUTION:A thermal oxide film 5 is formed on a semiconductor substrate 1, and a polycrystalline silicon thin-film 6 is shaped. A first layer gate insulating film 7 is formed, a second layer insulating film 8 consisting of a material preventing oxidation is shaped, and said formed films 5 and 8 are left in an active region through a photo-etching process. The photo-etching process is simplified extremely because the material used as the second gate insulating film is employed as a mask for forming a field oxide film, a mask for diffusing a channel- stopper impurity and a mask for diffusing an active region impurity at that time.</p> |
