| 摘要 |
PURPOSE:To prevent deposition of a thin film near a microwave introducing window by using as a starting material a gas containing halogen or an etching gas at the time of forming a photoconductive layer in a film forming device by the electron cyclotron resonance method. CONSTITUTION:A conductive substrate drum 8 made of aluminum or the like is set rotatably in a deposition chamber 2, the gas for forming an a-Si layer, usually such as hydrogen compounds, into the chamber 2 and the a-Si layer is deposited. The etching gas is mixed with said gas or a halogenated compound as the material gas is used, thus permitting the thin film deposited near the microwave introducing window 5 to be etched off and such deposition to be avoided, and a good film to be formed on the substrate. |
